| PART |
Description |
Maker |
| AM49DL640BG |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 32 Mbit (512K x 16-Bit) Pseudo Static RAM (Preliminary)
From old datasheet system
|
AMD Inc
|
| JS28F128P33BF70 JS28F128P33TF70A PC28F640P33BF60A |
Numonyx? P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)
|
Micron Technology
Microchip Technology
Numonyx B.V
|
| AM41PDS3228D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Page Mode Flash Memory and 8 Mbit
From old datasheet system
|
AMD Inc
|
| SST34HF1681-90-4E-L1P SST34HF1601-90-4C-L1P SST34H |
Self-Calibrating, 16-Bit Analog-to-Digital Converter 6-SOT-23 -40 to 85
16 Mbit Concurrent SuperFlash 8 Mbit SRAM ComboMemory 16兆位的SuperFlash 8兆位并行SRAM的ComboMemory
|
Silicon Storage Technology, Inc.
|
| AM41DL3208GB70I AM41DL3208GB85I AM41DL3208GT30IT A |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
SPANSION
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏，只有闪存的CMOS
|
PMC-Sierra, Inc.
|
| SST39SF040 |
(SST39SF010A / SST39SF020A / SST39SF040) 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
| AM41DL6408G25IS AM41DL6408G25IT AM41DL6408G45IS AM |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4x 16位）.0伏的CMOS只，同时作业闪存兆位 M中的x 8-Bit/512x 16位），静态存储器
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4米x 16位）.0伏的CMOS只，同时作业闪存兆位 M中的x 8-Bit/512亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
